SiGe BiCMOS技术中集成高速hbt电吸收调制器和驱动器的设计

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2012-09-05 DOI:10.1109/MWSCAS.2012.6291951

E. Fu, V. Koomson, Pengfei Wu, Shengling Deng, Z. R. Huang

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引用次数: 2

摘要

单片光电集成电路是高速光通信系统发展的主要研究热点。标准硅工艺为电光系统集成提供了一种经济有效的方法。本文提出了一种基于130nm SiGe BiCMOS技术的单片光调制器和驱动器的设计。布局后仿真结果表明，该调制器实现了10GHz的开关频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology

Monolithic optoelectronic integrated circuits are a primary focus of research for high-speed optical communication system development. Standard silicon processes provide a cost effective way for electro-optic system integration. This paper presents a monolithic optical modulator and driver design based on 130nm SiGe BiCMOS technology. Post-layout simulation results demonstrate that the modulator achieves a switch frequency of 10GHz.

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2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)

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