{"title":"基于硅侧PIN二极管的固体等离子体天线","authors":"Yi Chong, Liu Juan, G. Zhiqiang","doi":"10.1109/IWS49314.2020.9360026","DOIUrl":null,"url":null,"abstract":"In this paper, a solid plasma antenna is proposed and analyzed. This solid plasma antenna is composed of silicon lateral PIN diodes, in which the i-region is exposed on the silicon wafer. The lateral PIN diodes in sufficient forward bias could be regarded and analyzed as plasmas, which could be a substitution of traditional metal in antenna structures, due to the carrier density in diodes maintaining at a high level. The solid plasma dipole antenna with bias feeding network has been designed and fabricated. The antenna resonant frequency could shift by step over an octave.","PeriodicalId":301959,"journal":{"name":"2020 IEEE MTT-S International Wireless Symposium (IWS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Solid Plasma Antenna Based on Silicon Lateral PIN diodes\",\"authors\":\"Yi Chong, Liu Juan, G. Zhiqiang\",\"doi\":\"10.1109/IWS49314.2020.9360026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a solid plasma antenna is proposed and analyzed. This solid plasma antenna is composed of silicon lateral PIN diodes, in which the i-region is exposed on the silicon wafer. The lateral PIN diodes in sufficient forward bias could be regarded and analyzed as plasmas, which could be a substitution of traditional metal in antenna structures, due to the carrier density in diodes maintaining at a high level. The solid plasma dipole antenna with bias feeding network has been designed and fabricated. The antenna resonant frequency could shift by step over an octave.\",\"PeriodicalId\":301959,\"journal\":{\"name\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS49314.2020.9360026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS49314.2020.9360026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Solid Plasma Antenna Based on Silicon Lateral PIN diodes
In this paper, a solid plasma antenna is proposed and analyzed. This solid plasma antenna is composed of silicon lateral PIN diodes, in which the i-region is exposed on the silicon wafer. The lateral PIN diodes in sufficient forward bias could be regarded and analyzed as plasmas, which could be a substitution of traditional metal in antenna structures, due to the carrier density in diodes maintaining at a high level. The solid plasma dipole antenna with bias feeding network has been designed and fabricated. The antenna resonant frequency could shift by step over an octave.
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