在SiGe BiCMOS技术中产生300 GHz的超宽带信号

S. Thomas, B. Welp, N. Pohl
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引用次数: 3

摘要

本文提出了一种超高带宽信号生成MMIC。基于一个工作在75 GHz的基频振荡器,然后是一个两级频率四倍器,实现了231.2-309.1 GHz的输出频率范围,从而使总体调谐范围接近78 GHz。发射机MMIC的最大输出功率为−2.8 dBm,在整个78 GHz调谐范围内功率变化为7.5 dB。结合低相位噪声约为。−75 dBc/Hz @ 1 MHz偏移300 GHz输出信号,各种高分辨率距离测量或成像应用,特别是在工业质量保证或在线过程监控领域成为可能。在5 V单电源电压下,完整MMIC的功耗为700 mW,可以实现工业用低功耗传感器。采用英飞凌提供的成熟的B11HFC SiGe BiCMOS技术,可以实现可靠且具有成本效益的生产。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-wideband signal generation at 300 GHz in a SiGe BiCMOS technology
In this paper an ultra high bandwidth signal generation MMIC is presented. Based on an fundamental oscillator working at 75 GHz followed by a two stage frequency quadrupler, an output frequency range from 231.2–309.1 GHz is achieved, resulting in an overall tuning range of almost 78 GHz. The maximum output power of the transmitter MMIC is −2.8 dBm with a power variation of 7.5 dB over the complete 78 GHz tuning range. In combination with a low phase noise of approx. −75 dBc/Hz @ 1 MHz offset of the 300 GHz output signal, various high resolution distance measurements or imaging applications especially in the field of industrial quality assurance or in-line process monitoring become possible. With a power consumption of the complete MMIC of 700 mW at a single supply voltage of 5 V the realization of low-power sensors for industrial use can be achieved. The use of the well-established B11HFC SiGe BiCMOS technology provided by Infineon Technologies AG allows a reliable and cost-effective production as well.
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