Improved Lateral Coupling Cell for a Standard Logic Process eNVM Application

In this paper, we describe a new single poly MTP (multiple time programmable) cell using contact plate and select gate coupling manufactured by 90 nm standard CMOS (complementary metal-oxide semiconductor) process. Proposed MTP cell size is smaller than conventional well coupled MTP cell and only select gate lateral coupling MTP cell in order to have the similar coupling ratio (CR) as the 1.98~3.26 μm2. The program erase operation use channel hot electron injection (CHEI) and band to band hot hole injection (BTBT-HHI). The cell performances are compared with splits group by coupling ratio (CR). Through the results represented by the experiments, we were able to achieve cell endurance of 100 cycle and 10 year retention lifetime at 150 °C, and realize operation margin with ease if coupling ratio is increased by adding plate contact. The describing cell using coupling of select gate and plate contact is thought to have more useful application due to technology shrink.