{"title":"利用退火技术提高AlGaN/GaN高电子迁移率晶体管的击穿电压","authors":"Jaesun Lee, Dongmin Liu, Wu Lu","doi":"10.1109/ISDRS.2003.1272020","DOIUrl":null,"url":null,"abstract":"A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique\",\"authors\":\"Jaesun Lee, Dongmin Liu, Wu Lu\",\"doi\":\"10.1109/ISDRS.2003.1272020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique
A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
