铜掺杂碲化镉的输运现象:从第一性原理计算

O. Malyk, I. Petrovych, H. Kenyo
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引用次数: 0

摘要

本文讨论了在任意给定温度下确定碲镉能谱、重空穴波函数和晶体势的方法。利用这种方法,在超级单体方法的框架内,计算了碲化镉中铜杂质引入引起的各类缺陷电离能的温度依赖性。此外,该方法还可以定义光学和声学变形势的温度依赖性,以及重空穴散射参数对电离杂质、极性光学、压电光学和压电声子的温度依赖性。在短程散射模型的框架内,考虑了重空穴迁移率和霍尔因子的温度依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transport phenomena in copper doped cadmium telluride: calculation from the first principles
In the presented work, the method of determining the energy spectrum, the wave function of the heavy hole and the crystal potential in CdTe at an arbitrarily given temperature is considered. Using this approach within the framework of the supercell method the temperature dependences of the ionization energies of various types of defects caused by the introduction of copper impurity in cadmium telluride are calculated. Also the proposed method makes it possible to define the temperature dependence of the optical and acoustic deformation potentials, as well as the temperature dependence of the scattering parameters of heavy holes on ionized impurities, polar optical, piezooptical and piezoacoustic phonons. Within the framework of short-range scattering models, the temperature dependences of the heavy hole mobility and Hall factor are considered.
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