第五代移动通信全集成CMOS宽带功率放大器

2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC) Pub Date : 2023-06-25 DOI:10.1109/ITC-CSCC58803.2023.10212682

Bonghyuk Park, Hui-Dong Lee, Seunghyun Jang, Sunwoo Kong, Seunghun Wang, Jung-hwan Hwang

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引用次数: 0

摘要

本文介绍了一种功率放大器(PA)，该放大器使用65nm大块CMOS器件为第五代移动网络(5G)执行频率范围2(FR2)。采用两级级联码结构的功率放大器在2.2 v供电电压下，在28 GHz工作时的信号增益为29.2 dB，输出1-dB压缩功率(OP1dB)为20.35 dBm，峰值功率增加效率为27.1%。29GHz时的小信号增益为28.8 dB, OP1dB为20.29 dBm, 2.2 v供电电压下的峰值功率附加效率为26.9%。

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Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications

This paper describes a power amplifier(PA) that performs frequency range 2(FR2) for fifth generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture achieved a small signal gain of 29.2 dB, the output 1-dB compression power (OP1dB) of 20.35 dBm, and the power added efficiency at peak power of 27.1% at 28 GHz under 2.2-V supply voltage. At 29GHz the small signal gain is 28.8 dB, the OP1dB is 20.29 dBm, and the power-added efficiency at peak power is 26.9% under 2.2-V supply voltage.

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2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC)

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