用非平衡分布函数求解HgCdTe异质结构输运方程的数值方法

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7546994

K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel

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引用次数: 0

摘要

本文提出了一种利用电子和空穴的非平衡分布函数求解半导体异质结构中输运方程组的数值方法。该方法通过对波矢量空间的积分计算载流子浓度、载流子迁移率和熵。用同样的方法确定电流密度和熵电流密度。考虑了准费米能量梯度和温度梯度对异质结构物理参数的影响。

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The numerical method for solving the transport equations in HgCdTe heterostructures using the nonequilibrium distribution functions

This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.

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2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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