NBTI诱导SRAM Vccmin漂移的预测与控制

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346779

J.C. Lin, A. Oates, H. Tseng, Y. Liao, T. Chung, K. Huang, P. Tong, S.H. Yau, Y.F. Wang

{"title":"NBTI诱导SRAM Vccmin漂移的预测与控制","authors":"J.C. Lin, A. Oates, H. Tseng, Y. Liao, T. Chung, K. Huang, P. Tong, S.H. Yau, Y.F. Wang","doi":"10.1109/IEDM.2006.346779","DOIUrl":null,"url":null,"abstract":"The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Prediction and Control of NBTI -- Induced SRAM Vccmin Drift\",\"authors\":\"J.C. Lin, A. Oates, H. Tseng, Y. Liao, T. Chung, K. Huang, P. Tong, S.H. Yau, Y.F. Wang\",\"doi\":\"10.1109/IEDM.2006.346779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

本文全面研究了NBTI对SRAM Vccmin稳定性的影响。作者描述了一种新的模拟技术来预测由NBTI引起的Vccmin漂移的模间统计分布。虽然漂移是一种基本现象，但研究表明，通过电池设计和晶体管工艺优化，可以将漂移降低到可容忍的水平

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Prediction and Control of NBTI -- Induced SRAM Vccmin Drift

The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 International Electron Devices Meeting

自引率

0.00%

发文量