R. Ahrenkiel, D. Dunlavy, B. Keyes, S. Vernon, S. Tobin, T. M. Dixon
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Design of high efficiency solar cells by photoluminescence studies
A metalorganic chemical vapor deposition (MOCVD) Al/sub x/Ga/sub 1-x/As passivated GaAs single-junction solar cell with AM1.5 efficiency of 24.8% was recently constituted. Growth process research was greatly expedited by complementary time-resolved photoluminescence measurements on double heterostructures. The latter simulated the active regions of the solar cell and produced values of the minority carrier lifetime and interface recombination velocity of the components of the solar cell. Photon recycling was shown to be a significant process in the effective lifetime of the various structures. Interface recombination was found to limit the lifetime in materials grown at temperatures below 740 degrees C.<>
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