G. Yurtsever, J. Brouckaert, W. Bogaerts, P. Dumon, D. van Thourhout, R. Baets
{"title":"在SOI上使用级联平面凹光栅和环形谐振器的紧凑型解复用器","authors":"G. Yurtsever, J. Brouckaert, W. Bogaerts, P. Dumon, D. van Thourhout, R. Baets","doi":"10.1109/LEOS.2009.5343160","DOIUrl":null,"url":null,"abstract":"We present a compact demultiplexer based on cascaded planar concave grating and ring resonators. The demultiplexer has 28 channels, with 1 nm channel spacing. The device was fabricated on a silicon-on-insulator (SOI) platform using CMOS compatible deep UV lithography. The size of the structure is 1.5 times 3 mm. Insertion loss is 15 dB, channel to channel variation is 5 dB.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":"1993 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Compact demultiplexer using cascaded planar concave grating and ring resonators on SOI\",\"authors\":\"G. Yurtsever, J. Brouckaert, W. Bogaerts, P. Dumon, D. van Thourhout, R. Baets\",\"doi\":\"10.1109/LEOS.2009.5343160\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a compact demultiplexer based on cascaded planar concave grating and ring resonators. The demultiplexer has 28 channels, with 1 nm channel spacing. The device was fabricated on a silicon-on-insulator (SOI) platform using CMOS compatible deep UV lithography. The size of the structure is 1.5 times 3 mm. Insertion loss is 15 dB, channel to channel variation is 5 dB.\",\"PeriodicalId\":269220,\"journal\":{\"name\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"volume\":\"1993 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2009.5343160\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343160","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact demultiplexer using cascaded planar concave grating and ring resonators on SOI
We present a compact demultiplexer based on cascaded planar concave grating and ring resonators. The demultiplexer has 28 channels, with 1 nm channel spacing. The device was fabricated on a silicon-on-insulator (SOI) platform using CMOS compatible deep UV lithography. The size of the structure is 1.5 times 3 mm. Insertion loss is 15 dB, channel to channel variation is 5 dB.