inp基异质结双极晶体管取向效应的原子力显微镜分析

2007 ICTON Mediterranean Winter Conference Pub Date : 2007-12-01 DOI:10.1109/ICTONMW.2007.4446981

D. Sachelarie, S. Stanciu, G. Stanciu

{"title":"inp基异质结双极晶体管取向效应的原子力显微镜分析","authors":"D. Sachelarie, S. Stanciu, G. Stanciu","doi":"10.1109/ICTONMW.2007.4446981","DOIUrl":null,"url":null,"abstract":"The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.","PeriodicalId":366170,"journal":{"name":"2007 ICTON Mediterranean Winter Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors\",\"authors\":\"D. Sachelarie, S. Stanciu, G. Stanciu\",\"doi\":\"10.1109/ICTONMW.2007.4446981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.\",\"PeriodicalId\":366170,\"journal\":{\"name\":\"2007 ICTON Mediterranean Winter Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 ICTON Mediterranean Winter Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTONMW.2007.4446981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 ICTON Mediterranean Winter Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTONMW.2007.4446981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了原子力显微镜(AFM)对三发射极取向InP/InGaAs异质结双极晶体管电流增益的影响。用原子力显微镜对样品的三维表面形貌进行了表征。得到了三个发射极的电流增益与集电极电流的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors

The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 ICTON Mediterranean Winter Conference

自引率

0.00%

发文量