采用开关电流技术的低压CMOS电流存储单元的分析与设计

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) Pub Date : 1900-01-01 DOI:10.1109/ICM.2003.238305

Y. Aki, M. El-Sayed, A. K. Aboul-Seoud

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引用次数: 1

摘要

本文对两步开关电流(S/sup 2/I)存储单元进行了详细的时序分析。此外，本文还提出了一种单电源1V的SI电流复制器的新设计。采用0.25 /spl μ m CMOS工艺参数的SPICE仿真验证了分析和设计的正确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis and design of low-voltage CMOS current memory cells using switched current techniques

This paper presents a detailed temporal analysis of two-step switched current (S/sup 2/I) memory cells. Also, a new design of an SI current copier operating with a single 1V supply is presented. The analysis and design are supported and validated by SPICE simulations using 0.25 /spl mu/m CMOS process parameters.

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Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)

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