加热速率对银锗共掺杂CZTS薄膜结构和光学性能的影响

Y. Atasoy, A. Çiriş, M. A. Olgar
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引用次数: 0

摘要

研究了加热速率对Ag+Ge共掺杂CZTS薄膜结构和光学性能的影响,并与未掺杂CZTS样品进行了比较。采用两阶段技术制备了未掺杂和Ag+Ge共掺杂的CZTS样品,该两阶段技术包括在溅射系统中依次沉积前驱体堆叠,并在RTP系统中以1°C/s、2°C/s和3°C/s的加热速率对这些层进行高温硫化。Ag和Ge共掺前驱体堆叠和未掺杂前驱体堆叠表现出贫铜富锌的组成。此外,考虑到EDS测量,Ag+Ge共掺杂堆叠的掺杂比例接近目标含量。无论采用何种加热速率或掺杂工艺,所有样品均以钾石结构结晶。然而,通过XRD测量证实,高加热速率导致了kesterite相形成过程中的相分离。另一方面,加入Ag和Ge抑制了CZTS结构中cu空位和CuZn反位缺陷形成的拉曼峰。加热斜坡速率为1°C/s的Ag和Ge共掺杂CZTS样品具有较好的结构和光学效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
INFLUENCE OF HEATING RATE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SILVER AND GERMANIUM CO-DOPED CZTS THIN FILM
The effect of heating rate on the structural and optical properties of Ag+Ge co-doped CZTS thin film were investigated and compared with the undoped CZTS sample. The undoped and Ag+Ge co-doped CZTS samples obtained by two-stage technique consisting of the sequential deposition of the precursor stacks by sputtering systemand sulfurization of these layers at elevated temperature in the RTP system by employing heating rate of 1°C/s, 2°C/s and 3°C/s. Ag and Ge co-doped precursor stack as well as undoped stack demonstrated Cu-poor, Zn-rich composition. In addition, the dopant ratio of the Ag+Ge co-doped stack was close to the targeted content considering to EDS measurement. Regardless of the employed heating rate or the doping process, all of the samples crystallized in a kesterite structure. However, it was confirmed by XRD measurements that high heating rates caused phase separation in kesterite phase formation. On the other hand, The Raman peaks assigned to Cu-vacancy and CuZn antisite defects formation inhibited with incorporating Ag and Ge into the CZTS structure. Ag and Ge co-doped CZTS sample produced with a heating ramp rate of 1°C/s showed better structural and optical results among them.
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