用于ghz波段SAW器件的原子平面AlN外延膜

2002 IEEE Ultrasonics Symposium, 2002. Proceedings. Pub Date : 2002-12-01 DOI:10.1109/ULTSYM.2002.1193370

K. Uehara, H. Nakamura, H. Nakase, K. Tsubouchi

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引用次数: 2

摘要

利用金属有机化学气相沉积(MO-CVD)技术，在(00/spl middot/1)蓝宝石衬底上成功地制备了具有原子平面的(00/spl middot/1) AlN薄膜。在衬底温度1200/spl℃，低压30Torr，衬底温度1200/spl℃/℃的条件下，实现了小于Ra=2/spl Aring/的原子平面，Ra为原子力显微镜(AFM)测量的平均粗糙度，厚度在1.7 /spl mu/m以内。低V-III比500年的大量流量trimethylaluminum (TMA)备份H /子2 /天然气5.0 slm temperature-coefficient-of-delay (TCD)的声表面波(看到)设备(00 / spl压力/ 1)AlN / (00 / spl压力/ 1)Al /子2 / O /订阅3 /结合自动平面发现44.5 ppm / /在kH spl度/ C = 2.25和28.5 ppm / / spl kH = 3.32度/ C, kH是波数的归一化厚度,k是波数和H是膜厚度。实测TCD与模拟曲线吻合较好。具有原子平面的AlN/Al/sub 2/O/sub 3/组合在kH=4.5时具有零tcd的潜力。

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AlN epitaxial film with atomically flat surface for GHz-band SAW devices

We have successfully developed (00/spl middot/1) AlN film with atomically flat surface on (00/spl middot/1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2/spl Aring/, Ra means mean roughness measured by atomic force microscope (AFM), within the thickness of 1.7 /spl mu/m has been achieved, whose conditions are high substrate temperature of 1200/spl deg/C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H/sub 2/ gas of 5.0slm The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00/spl middot/1)AlN/ (00/spl middot/1) Al/sub 2/O/sub 3/ combination with atomically flat surface are found to be 44.5 ppm//spl deg/C at kH=2.25 and 28.5 ppm//spl deg/C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al/sub 2/O/sub 3/ combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

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2002 IEEE Ultrasonics Symposium, 2002. Proceedings.

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