GaAs Gunn振荡器达到140 GHz范围

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1131985

H. Barth, W. Menzel

{"title":"GaAs Gunn振荡器达到140 GHz范围","authors":"H. Barth, W. Menzel","doi":"10.1109/MWSYM.1985.1131985","DOIUrl":null,"url":null,"abstract":"Design and performance of an 135 GHz, 3rd harmonic oscillator utilizing a 45 GHz Ga As-Gunn device is described. The nonlinear capacitance of the Gunn-device is used for frequency triplication. Hence an idler circuit for the 2nd harmonic wave is built in. This raises the efficiency of fundamental wave to 3rd harmonic wave conversion considerably. Output power was measured as 3 mW.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"GaAs Gunn Oscillators Reach the 140 GHz Range\",\"authors\":\"H. Barth, W. Menzel\",\"doi\":\"10.1109/MWSYM.1985.1131985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design and performance of an 135 GHz, 3rd harmonic oscillator utilizing a 45 GHz Ga As-Gunn device is described. The nonlinear capacitance of the Gunn-device is used for frequency triplication. Hence an idler circuit for the 2nd harmonic wave is built in. This raises the efficiency of fundamental wave to 3rd harmonic wave conversion considerably. Output power was measured as 3 mW.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1131985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

介绍了一种基于45 GHz Ga As-Gunn器件的135 GHz三谐振荡器的设计和性能。gunn器件的非线性电容用于三倍频。因此，一个空闲电路的第二谐波是内置的。这大大提高了基波到三次谐波转换的效率。输出功率测量为3mw。

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GaAs Gunn Oscillators Reach the 140 GHz Range

Design and performance of an 135 GHz, 3rd harmonic oscillator utilizing a 45 GHz Ga As-Gunn device is described. The nonlinear capacitance of the Gunn-device is used for frequency triplication. Hence an idler circuit for the 2nd harmonic wave is built in. This raises the efficiency of fundamental wave to 3rd harmonic wave conversion considerably. Output power was measured as 3 mW.

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1985 IEEE MTT-S International Microwave Symposium Digest

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