{"title":"有关用于雷达系统的GaAs场效应管功率放大器的重要考虑","authors":"J.L.B. Walker","doi":"10.1109/SBMO.1993.589543","DOIUrl":null,"url":null,"abstract":"This paper will review the relative merits of class A and class B bias for GaAs FET power amplifiers intended for use in radar systems. Aspects to be considered are power and efficiency in the gain compression/saturation region as a function of bias point, gain degradation in class B compared with class A, and range sidelobes resulting from pulsed operation and its implications for the pulse compression system.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Important Considerations Relating To GaAs Fet Power Amplifiers Intended For Use In Radar Systems\",\"authors\":\"J.L.B. Walker\",\"doi\":\"10.1109/SBMO.1993.589543\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper will review the relative merits of class A and class B bias for GaAs FET power amplifiers intended for use in radar systems. Aspects to be considered are power and efficiency in the gain compression/saturation region as a function of bias point, gain degradation in class B compared with class A, and range sidelobes resulting from pulsed operation and its implications for the pulse compression system.\",\"PeriodicalId\":219944,\"journal\":{\"name\":\"SBMO International Microwave Conference/Brazil,\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SBMO International Microwave Conference/Brazil,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMO.1993.589543\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SBMO International Microwave Conference/Brazil,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMO.1993.589543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Important Considerations Relating To GaAs Fet Power Amplifiers Intended For Use In Radar Systems
This paper will review the relative merits of class A and class B bias for GaAs FET power amplifiers intended for use in radar systems. Aspects to be considered are power and efficiency in the gain compression/saturation region as a function of bias point, gain degradation in class B compared with class A, and range sidelobes resulting from pulsed operation and its implications for the pulse compression system.
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