{"title":"基于有限元的Ba0.8Sr0.2TiO3可调谐BAW谐振器建模","authors":"Daw A. Asderah, T. Kalkur","doi":"10.1109/ISAF.2017.8000200","DOIUrl":null,"url":null,"abstract":"In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"FEM based modeling of tunable BAW resonators with Ba0.8Sr0.2TiO3\",\"authors\":\"Daw A. Asderah, T. Kalkur\",\"doi\":\"10.1109/ISAF.2017.8000200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.\",\"PeriodicalId\":421889,\"journal\":{\"name\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2017.8000200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
FEM based modeling of tunable BAW resonators with Ba0.8Sr0.2TiO3
In this paper, a finite element method and multiphysics based 3D modeling of tunable ferroelectric thin film resonator taking the advantages of electrostrictive and piezoelectric effects of Ba0.8Sr0.2TiO3 thin film. DC electrical field dependency of the dielectric permittivity and elasticity coefficients can control the resonances in the thin film. The resonator has a series resonant frequency of 4.33 GHz and parallel resonance at 4.43 GHz with applied DC voltage of 2 V. The electromechanical coupling coefficient is measured at 5.4% and increased to be 8% with the biasing voltage at 8V.
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