数字仿真中晶闸管和二极管的模型

1979 IEEE Power Electronics Specialists Conference Pub Date : 1979-06-18 DOI:10.1109/PESC.1979.7081054

M. Venturini, A. Sangiovanni-Vincentelli, P. Wood

{"title":"数字仿真中晶闸管和二极管的模型","authors":"M. Venturini, A. Sangiovanni-Vincentelli, P. Wood","doi":"10.1109/PESC.1979.7081054","DOIUrl":null,"url":null,"abstract":"Two models are proposed for digital simulations involving power diodes and thyristors. The models simulate all operating regions of the devices, and include transient and thermal behavior. Particular emphasis has been placed on reverse recovery behaviors, to improve simulation accuracy in high frequency and multiple device applications. Either model can be completely specified from standard data sheet parameters.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Models for thyristors and diode in digital simulations\",\"authors\":\"M. Venturini, A. Sangiovanni-Vincentelli, P. Wood\",\"doi\":\"10.1109/PESC.1979.7081054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two models are proposed for digital simulations involving power diodes and thyristors. The models simulate all operating regions of the devices, and include transient and thermal behavior. Particular emphasis has been placed on reverse recovery behaviors, to improve simulation accuracy in high frequency and multiple device applications. Either model can be completely specified from standard data sheet parameters.\",\"PeriodicalId\":101593,\"journal\":{\"name\":\"1979 IEEE Power Electronics Specialists Conference\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1979.7081054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1979.7081054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了两种涉及功率二极管和晶闸管的数字仿真模型。这些模型模拟了器件的所有工作区域，包括瞬态和热行为。特别强调的是反向恢复行为，以提高高频和多设备应用中的模拟精度。任何一种型号都可以完全从标准数据表参数中指定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Models for thyristors and diode in digital simulations

Two models are proposed for digital simulations involving power diodes and thyristors. The models simulate all operating regions of the devices, and include transient and thermal behavior. Particular emphasis has been placed on reverse recovery behaviors, to improve simulation accuracy in high frequency and multiple device applications. Either model can be completely specified from standard data sheet parameters.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1979 IEEE Power Electronics Specialists Conference

自引率

0.00%

发文量