一种分析LSI上热点分布的静态方法

2019 IEEE International Test Conference in Asia (ITC-Asia) Pub Date : 2019-09-01 DOI:10.1109/ITC-Asia.2019.00026

K. Miyase, Yudai Kawano, Shyue-Kung Lu, X. Wen, S. Kajihara

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引用次数: 0

摘要

通过在布局设计阶段改进供电网络，可以避免LSI正常功能模式下高ir降导致的性能下降。然而，虽然测试模式下的ir下降比正常功能模式下的ir下降要大得多，但在布局设计阶段没有适当考虑测试模式下的过度ir下降。测试模式下ir降过高会导致过度测试，从而错误地将正常工作模式下的无故障LSI电路判断为故障。在这项工作中，我们提出了一种分析高红外下降区域(热点分布)的方法，这是有效和高效地减少过度红外下降所必需的。

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A Static Method for Analyzing Hotspot Distribution on the LSI

Performance degradation caused by high IR-drop in normal functional mode of LSI can be avoided by improving the power supply network in the layout design phase. However, while IR-drop increases much more in test mode than in normal functional mode, excessive IR-drop in test mode is not appropriately considered in the layout design phase. Excessive IR-drop in test mode causes over-testing, which wrongly determines a fault free LSI in normal functional mode to be faulty. In this work, we propose a method for analyzing high IR-drop areas (hotspot distribution), which is necessary to effectively and efficiently reduce excessive IR-drop.

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2019 IEEE International Test Conference in Asia (ITC-Asia)

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