{"title":"体积和MOCVD薄膜覆盖对微带谐振器特性的影响","authors":"K. Joshi, R. Pollard, V. Postoyalko","doi":"10.1109/SBMO.1993.587251","DOIUrl":null,"url":null,"abstract":"Shift in the resonance frequency and an increase in the Q factor of microstrip resonators in the presence of dielectric cover are observed in the frequency range of 2- 26GHz. Various microwave materials are used as a dielectric cover which include bulk alumina, semi-insulating GaAs, RT-Duroid and MOCVD A1203 thin film. Increase in the Q factor is found to vary between 103% to 769% depending upon the cover permittivity and thickness. A process has been proposed to fabricate mu1 tilayer homogeineous microstrip using thin film alumina as a cover material giving rise to increase in the quality factor by 137% to 259 % .","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects Of Bulk And MOCVD Thin Film Cover On The Characteristics Of Microstrip Resonators\",\"authors\":\"K. Joshi, R. Pollard, V. Postoyalko\",\"doi\":\"10.1109/SBMO.1993.587251\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shift in the resonance frequency and an increase in the Q factor of microstrip resonators in the presence of dielectric cover are observed in the frequency range of 2- 26GHz. Various microwave materials are used as a dielectric cover which include bulk alumina, semi-insulating GaAs, RT-Duroid and MOCVD A1203 thin film. Increase in the Q factor is found to vary between 103% to 769% depending upon the cover permittivity and thickness. A process has been proposed to fabricate mu1 tilayer homogeineous microstrip using thin film alumina as a cover material giving rise to increase in the quality factor by 137% to 259 % .\",\"PeriodicalId\":219944,\"journal\":{\"name\":\"SBMO International Microwave Conference/Brazil,\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SBMO International Microwave Conference/Brazil,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMO.1993.587251\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SBMO International Microwave Conference/Brazil,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMO.1993.587251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects Of Bulk And MOCVD Thin Film Cover On The Characteristics Of Microstrip Resonators
Shift in the resonance frequency and an increase in the Q factor of microstrip resonators in the presence of dielectric cover are observed in the frequency range of 2- 26GHz. Various microwave materials are used as a dielectric cover which include bulk alumina, semi-insulating GaAs, RT-Duroid and MOCVD A1203 thin film. Increase in the Q factor is found to vary between 103% to 769% depending upon the cover permittivity and thickness. A process has been proposed to fabricate mu1 tilayer homogeineous microstrip using thin film alumina as a cover material giving rise to increase in the quality factor by 137% to 259 % .
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