R. Reiner, P. Waltereit, F. Benkhelifa, S. Muller, S. Müller, H. Walcher, S. Wagner, R. Quay, M. Schlechtweg, O. Ambacher
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Fractal structures for low-resistance large area AlGaN/GaN power transistors
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR >; 700V and on-state currents of ID = 40A at VGS = 1V.
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