利用rp-ald方法对氧化铪层沉积过程进行数值模拟

Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI:10.29003/m3078.mmmsec-2022/92-94

S. Zyuzin, A. Rezvanov, Yason G. Zasseev, V. Gvozdev, E. Ganykina, E. Gornev

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摘要

本文考虑了氧化铪层的远程等离子体原子层沉积(RP-ALD)模型。该模型基于蒙特卡罗方法，考虑了过程的化学动力学

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NUMERIC MODELING OF A DEPOSITION OF HAFNIUM OXIDE LAYERS USING RP-ALD METHOD

In this work, model of remote plasma atomic layer deposition (RP-ALD) of hafnium oxide layers was considered. This model is based on Monte-Carlo method and takes into account the chemical kinetics of a process

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Mathematical modeling in materials science of electronic component

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