大功率PHEMT的非正常故障罢工

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567633

Y. Chou, G. Li, K. Yu, C. Wu, P. Chu, L. Hou, T. Midford

{"title":"大功率PHEMT的非正常故障罢工","authors":"Y. Chou, G. Li, K. Yu, C. Wu, P. Chu, L. Hou, T. Midford","doi":"10.1109/GAAS.1996.567633","DOIUrl":null,"url":null,"abstract":"PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT's process for reliability and to improve the breakdown voltage.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Off-state breakdown walkout in high-power PHEMT's\",\"authors\":\"Y. Chou, G. Li, K. Yu, C. Wu, P. Chu, L. Hou, T. Midford\",\"doi\":\"10.1109/GAAS.1996.567633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT's process for reliability and to improve the breakdown voltage.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

制备了不同表面条件和不同厂商外延片上的PECVD氮化高功率AlGaAs/InGaAs PHEMTs，研究了其脱态击穿。结果表明，钝化高功率phemt的击穿脱脱取决于表面工艺条件，而与起始晶片的关系较小。在240/spl℃退火400小时后，击穿析出无明显恢复，表明永久性改善。结果为优化PHEMT的可靠性和提高击穿电压提供了一种替代方案。

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Off-state breakdown walkout in high-power PHEMT's

PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT's process for reliability and to improve the breakdown voltage.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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