一种新型、高分辨率、非接触式通道温度测量技术

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1998-03-30 DOI:10.1109/RELPHY.1998.670458

Q. Kim, B. Stark, S. Kayali

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引用次数: 3

摘要

提出了一种基于红外发射光谱的原位光学技术，用于非接触式测量GaAs金属/半导体场效应晶体管(MESFET)栅极通道中热点的温度。该方法在通电和未通电的GaAs mesfet上进行了验证，获得了0.5 /spl mu/m的空间分辨率。

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A novel, high resolution, non-contact channel temperature measurement technique

An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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