GaN基低噪声放大器(mmic)螺旋环形电感的设计与分析

2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE) Pub Date : 2015-12-01 DOI:10.1109/ICMOCE.2015.7489749

S. Chander, K. Bansal, Samuder Gupta, Mridula Gupta

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引用次数: 2

摘要

本文提出了一种在厚度为100μm的碳化硅(SiC)衬底上制作螺旋圆形电感的设计、分析和优化方法。这些电感设计用于基于氮化镓(GaN)的单片微波集成电路(mmic)，专门用于低噪声放大电路。利用ADS (Advanced Design System)软件对不同带宽(μm)(即12、16、24和36)的FMI (Q × SRF/芯片面积)电感进行了模拟，模拟步骤为1 ~ 5匝，各为0.5匝。对于宽度为12μm的1匝电感，在22 GHz时最大模拟q因子为54,SRF为46 GHz。带宽为12μm的5匝电感在2.8 GHz时的q因子为23,SRF为5.6 GHz。电感值从0.46 nH(1匝)到5.6 nH(5匝)，带宽为12μm。

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Design and analysis of spiral circular inductors for GaN based low noise amplifier (MMICs)

This paper presents a novel approach for the design, analysis and optimization of spiral circular inductors to be fabricated on Silicon Carbide (SiC) substrate of thickness 100μm. These inductors are designed for use in Gallium Nitride (GaN) based Monolithic Microwave Integrated Circuits (MMICs) specifically for low noise amplifier circuits. On basis of the maximum figure of merit indicator FMI (Q × SRF/chip area) inductors of various strip-widths (μm) i.e. for 12, 16, 24 and 36 from 1 to 5 turns steps of 0.5 turns have been simulated using ADS (Advanced Design System) software. The maximum simulated Q-factor is 54 at 22 GHz and SRF is 46 GHz for 1-turn inductor of 12μm width with maximum figure of merit. The Q-factor is 23 at 2.8 GHz and SRF is 5.6 GHz for 5-turn inductor of strip-width 12μm. The inductance values vary from 0.46 nH for 1-turn to 5.6 nH for 5-turn inductor of strip-width 12μm.

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2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)

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