{"title":"一种实现GaAs-FET yig调谐振荡器多倍频程性能的方法","authors":"C. Schiebold","doi":"10.1109/MWSYM.1985.1131957","DOIUrl":null,"url":null,"abstract":"An approach to developing multi-octave GaAs-FET YIG-tuned oscillators is described. A short discussion of the theory is given, followed by a presentation of experimental results for a 3.5 to 19.5 GHz YIG-tuned oscillator.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"433 1-2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"An Approach to Realizing Multi-Octave Performance in GaAs-FET YIG-Tuned Oscillators\",\"authors\":\"C. Schiebold\",\"doi\":\"10.1109/MWSYM.1985.1131957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An approach to developing multi-octave GaAs-FET YIG-tuned oscillators is described. A short discussion of the theory is given, followed by a presentation of experimental results for a 3.5 to 19.5 GHz YIG-tuned oscillator.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"433 1-2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1131957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Approach to Realizing Multi-Octave Performance in GaAs-FET YIG-Tuned Oscillators
An approach to developing multi-octave GaAs-FET YIG-tuned oscillators is described. A short discussion of the theory is given, followed by a presentation of experimental results for a 3.5 to 19.5 GHz YIG-tuned oscillator.
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