掺Co2O3对ZnO压敏电阻介电性能的影响

2013 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Pub Date : 2013-10-01 DOI:10.1109/CEIDP.2013.6747440

Chuntian Chen, Yulong Qiao, Dongsheng Wang, Qichao Shi, Haifeng Yang, Ximing Wang

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引用次数: 0

摘要

研究了Co2O3掺杂对ZnO压敏电阻介电性能的影响。随着Co2O3摩尔百分比的增加，ZnO晶粒的电导率降低，电压拐点降至电流密度较低的位置。根据电容和电压分析，晶粒电导率的降低可归因于间隙Zni或氧空位V0浓度的降低导致载流子浓度的降低。Co2O3的掺杂也会降低非线性电阻的介电损耗。该压敏电阻可用于金属氧化物避雷器。

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Effect of doped Co2O3 on Dielectric Properties of ZnO Varistor

This paper researches the effect of doped Co₂O₃ on the dielectric properties of ZnO varistor. With the increasing mol percentage of Co₂O₃, the conductivity of ZnO grain reducing, the turning point of the voltage drops to a lower position of the current density. According to the analysis of capacitance and voltage, the decrease of grain conductivity can attribute to the carrier concentration decrease which is caused by the reduction of interstitial Zn_i or concentration of oxygen vacancy V₀. The doped Co₂O₃ will also reduce the dielectric loss of nonlinear resistance. The varistor may apply to metal oxide arrester.

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2013 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

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