金属-碳纳米管界面的多尺度建模

2015 International Workshop on Computational Electronics (IWCE) Pub Date : 2015-11-03 DOI:10.1109/IWCE.2015.7301946

M. Claus, A. Fediai, S. Mothes, A. Pacheco, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter

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引用次数: 1

摘要

作者采用多尺度建模和仿真框架研究了接触材料对CNTFET行为的影响。金属-碳纳米管耦合强度、接触长度和接触电阻之间存在很强的相关性。原子模拟用于调整在设备级传输研究中使用的接触模型。

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Multi-scale modeling of metal-CNT interfaces

The authors studied the impact of contact materials on CNTFET behavior using multiscale modeling and simulation framework. A strong correlation between metal-CNT coupling strength, contact length and contact resistance was found. The atomistic simulation was used to adjust the contact model used within the transport studies at the device level.

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2015 International Workshop on Computational Electronics (IWCE)

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