Cu/ULK整合使用整合后的孔隙去除方法

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345748

M. Fayolle, V. Jousseaume, M. Assous, E. Tabouret, C. Le Cornec, P. Haumesser, P. Leduc, H. Feldis, O. Louveau, G. Passemard, F. Fusalba

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引用次数: 8

摘要

本文重点研究了一种新的集成方案来实现Cu/多孔ULK互连。电介质(由分散在MSQ基质中的多孔纳米颗粒制成的复合材料)在其非多孔状态下集成，防止了多孔材料固有的集成问题。孔隙度只有在成孔相的最终热降解整合后才会产生。为了实现单大马士革互连，研究了材料、固化和工艺的相容性。电学结果证明了该方法的可行性，表明在集成过程中可以保留孔隙，集成后可以去除孔隙。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cu/ULK integration using a post integration porogen removal approach

This paper is focused on a new integration scheme to perform Cu/porous ULK interconnects. The dielectric (composite material made of porogen nano-particles dispersed in a MSQ matrix) is integrated in its non-porous state, preventing integration issues inherent in porous material. The porosity is only created after integration by a final thermal degradation of the porogen phase. Material, curing and processes compatibilities have been studied in order to perform single damascene interconnects. Electrical results prove the feasibility of this approach, showing that the porogen can be preserved during the integration and removed after the integration.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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