电弧喷射等离子体制备c-BN涂层

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 2001-06-26 DOI:10.1109/WBL.2001.946566

V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov

{"title":"电弧喷射等离子体制备c-BN涂层","authors":"V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov","doi":"10.1109/WBL.2001.946566","DOIUrl":null,"url":null,"abstract":"c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"c-BN coating produced by arc-jet plasma\",\"authors\":\"V. Babaev, N. Savchenko, M. Guseva, V.P. Vaullin, V. S. Guden, V. V. Khvostov\",\"doi\":\"10.1109/WBL.2001.946566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.\",\"PeriodicalId\":315832,\"journal\":{\"name\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在Mo基体上制备了厚度为1mm的c-BN涂层。电弧喷射沉积是在Ar和N/sub / 2混合气体中进行的。以h-BN为前驱体。该设备包括一个w空心阴极，在200 a放电电流下，等离子体密度约为10/sup 14/ cm/sup -3/。工作室内氩气压力为1 Torr，残余压力为10/sup -2/ Torr。衬底温度为500 ~ 1000℃，薄膜生长速度约为0.2 mm/h。化学分析揭示了碳的存在。电子衍射图(JEM-100C)为多晶立方结构，晶体平均尺寸为1000 /spl Aring/，晶格常数a=3.58 /spl Aring/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

c-BN coating produced by arc-jet plasma

c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

自引率

0.00%

发文量