TiO2/SiO2纳米颗粒对MgB2块体中Hc2和Hirr的影响

2008 International Conference on Nanoscience and Nanotechnology Pub Date : 2008-10-07 DOI:10.1109/ICONN.2008.4639255

Yun Zhang, S. Soltanian, Yue Zhao, Sihai Zhou, S. Dou

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引用次数: 0

摘要

本文采用掺杂TiO2纳米粒子，表面经过5-10% SiO2修饰，制备了MgB2块体。采用Rietveld法进行定量x射线衍射(XRD)分析，得到杂质的质量分数。报道了TiO2/SiO2纳米粒子的加入对750℃下临界温度(Tc)、上临界场(Hc2)和不可逆场(Hirr)随掺杂率的变化规律的影响。研究发现，TiO2/SiO2纳米颗粒的加入对Tc有较小的抑制作用，而TiO2/SiO2纳米颗粒的掺杂则提高了Hc2和Hirr的性能。

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Effect of addition of TiO2/SiO2 nanoparticles on Hc2 and Hirr in MgB2 bulks

In this paper, MgB₂ bulks were prepared with doped TiO₂ nanoparticles surface-modified by 5-10% SiO₂. Quantitative X-ray diffraction (XRD) analysis was performed to obtain the weight fraction of impurities using the Rietveld method. The effects of addition of TiO₂/SiO₂ nanoparticles on the critical temperature (T_c), the upper critical field (H_c2), and the irreversibility field (H_irr) as a function of doping rates at 750degC are reported. It has been found that the addition of TiO₂/SiO₂ nanoparticles resulted in small depressions in T_c, while the Hc₂ and H_irr performances were improved due to TiO₂/SiO₂ nanoparticle doping.

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2008 International Conference on Nanoscience and Nanotechnology

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