声学显微镜用于亚表面缺陷的表征

I. Ishikawa, H. Kanda, K. Katakura
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引用次数: 13

摘要

摘要研制了一种工作频率为0.1 ~ L GHz的扫描声显微镜。所获得的声学显微照片清楚地表明,该装置可以无损地观察半导体器件中硅结构局部氧化边缘的尖峰缺陷和硅晶体中氢掺杂区域。并将声学数据与扫描电镜和光学显微镜所得结果进行了比较。使用高频超声波测量和检查材料微观区域的显微分析技术作为一种新的、极具前景的测量和观察手段,最近受到了广泛的关注。这些新方法的典型代表是1973年斯坦福大学C. F. Quate教授开发的机械扫描声学显微镜[1]。该装置将窄聚焦声束对准被二维扫描的样品,并检测从样品反射或透射的声波,以获得二维图像。获得的图像对比度反映了试样中材料力学性能的变化,如弹性、密度和粘度。声学显微镜的应用包括,例如,材料中的故障检测,半导体器件的检查,以及使用表面声波[2]-161对材料进行评估。在本文中,我们报告了对半导体器件中元件之间的隔离区域和硅衬底上氢离子轰击区域中产生的尖峰缺陷的研究结果。11. 声学显微镜的构造声学显微镜的工作原理和构造一般已经在许多论文中描述过,在这里略去。我们打算在这里只讨论我们的反射扫描声显微镜特有的几个特点。在研制过程中需要解决的最重要的技术问题是高性能压电薄膜的形成工艺的开发;一种制造微球面的方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Acoustic Microscope for Subsurface Defect Characterization
Abstmct-A scanning acoustic microscope operating in the frequency range 0.1 - L GHz has been developed. The acoustic micrographs obtained have clearly demonstrated that this device can be used nondestructively to observe spike defects at the edge of the local oxidation of silicon structures in semiconductor devices and hydrogenion-doped regions in silicon crystals. The acoustic data have been compared with results obtained through the scanning electron microscope and the optical microscope. ICROANALYSIS techniques used to measure and examine microscopic regions in materials with highfrequency ultrasound waves have recently received a great deal of attention as a new and highly promising means for measurement and observation. Typical of these new methods is the mechanical scanning acoustic microscope developed by Professor C. F. Quate at Stanford University in 1973 [l]. This device directs a narrow focused acoustic beam at a specimen being scanned two-dimensionally, and detects acoustic waves that are reflected from or transmitted through the specimen to obtain a two-dimensional image. The image contrast obtained reflects changes in the mechanical properties of materials in the specimen, such as elasticity, density, and viscosity. Applications of the acoustic microscope include, for example, fault detection in materials, the examination of semiconductor devices, and materials evaluation using surface acoustic waves [2]-161. In this paper we report the results of studies conducted on spike defects that arise in isolation regions between elements in semiconductor devices and regions bombarded by hydrogen ions on silicon substrates. 11. CONSTRUCTION OF THE ACOUSTIC MICROSCOPE The operating principles and construction of acoustic microscopes in general have already been described in a number of papers and will be omitted here. We intend to discuss here only several specific features particular to our reflection scanning acoustic microscope. The most important technical problems that had to solved during development of this device were the development of a process for forming high-performance piezoelectric film; a process for fabricating microspherical
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