接近效应对模拟设计的影响

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320869

P. Drennan, M. Kniffin, David R. Locascio

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引用次数: 105

摘要

本文讨论了两个重要的邻近效应，井邻近和STI应力，因为它们与模拟电路设计有关。设备性能受到位于设备附近的布局特征的影响，但不是设备的一部分。这给模拟设计增加了新的复杂性。在任何一种情况下，偏置点都可能移动20-30%，导致电路潜在的灾难性故障。我们首次证明，放置在井边附近的MOSFET会产生渐变通道

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Implications of Proximity Effects for Analog Design

This paper addresses two significant proximity effects, well proximity and STI stress, as they relate to analog circuit design. Device performance is impacted by layout features located near, but not part of the device. This adds new complexities to analog design. In either case, bias points can shift by 20-30%, causing potentially catastrophic failures in circuits. We show, for the first time, that a MOSFET placed close to a well-edge creates a graded channel

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IEEE Custom Integrated Circuits Conference 2006

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