An Efficient TCAD Model for TeraFET Detectors

We present a TCAD model for AlGaAs/InGaAs and AlGaN/GaN TeraFET detectors validated in a large dynamic range. The modeling results are in good agreement with the analytical theory of the THz detection using FETs and with the experimental data for the 130 nm AlGaAs/InGaAs HFETs. The model also demonstrates the response saturation at high intensities previously observed in measurements and reveals the physics of the response saturation associated with the gate leakage. The TCAD model reveals that the gate edge engineering could be even more important for the AlGaN/GaN HFETs.