Dae-Myeong Geum, Jinha Lim, Ju-Hwan Jang, Seungyeop Ahn, S. Kim, J. Shim, Bong-Ho Kim, Juhyuk Park, Woojin Baek, Jaeyong Jeong, Sanghyeon Kim
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A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)
A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved.