FOSS EKV 2.6参数提取器

2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES) Pub Date : 2015-06-25 DOI:10.1109/MIXDES.2015.7208507

Wladek Grabinski, Daniel Tomaszewski, F. Jazaeri, Anurag Mangla, Jean-Michel Sallese, Maria-Anna Chalkiadaki, Antonios Bazigos, Matthias Bucher

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引用次数: 5

摘要

随着器件级建模在微纳米CMOS工艺中面临挑战，先进集成电路(IC)的设计，特别是低功率模拟和射频(RF)应用变得更加复杂。由于目前的CMOS技术继续进行几何缩放，设计人员可以使用专用的SPICE MOSFET模型并应用特定的模拟设计方法。EKV是专门为满足模拟/射频设计要求而开发的。本文介绍了EKV 2.6模型直流参数提取的一套基本步骤。利用免费开源软件Profile2D工具对EKV 2.6 DC的精确提取策略进行了说明。

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FOSS EKV 2.6 parameter extractor

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The EKV was developed especially to meet altogether the analog/RF design requirements. This paper describes a basic set of the DC parameter extraction steps for the EKV 2.6 model. The free open source software (FOSS) Profile2D tool was used to illustrate accurate EKV 2.6 DC extraction strategy.

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2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)

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