采用GaN器件的高效率、大功率、50W输出的d类功率放大器

2021 Twelfth International Conference on Ubiquitous and Future Networks (ICUFN) Pub Date : 2021-08-17 DOI:10.1109/ICUFN49451.2021.9528632

Yeun Jeong Park, Kangyoon Lee

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引用次数: 1

摘要

GaN(氮化镓)半导体的功率密度是传统功率放大器中使用的si基后期扩散金属氧化物半导体(LDMOS)晶体管的10倍以上，可节省30%以上的功率，并具有更高的功率密度和效率。本文利用GaN驱动元件控制GaN元件构成的全桥结构，设计了一种输出功率大于40W的高效率、高功率d类功率放大器。该功率放大器采用三星180nm工艺，供电电源设计为5v。

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High-efficiency, High-power Class-D Power Amplifier with 50W Output Using GaN Devices

GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.

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2021 Twelfth International Conference on Ubiquitous and Future Networks (ICUFN)

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