未来大规模集成电路互连的碳纳米管通孔

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345767

M. Nihei, M. Horibe, A. Kawabata, Y. Awano

{"title":"未来大规模集成电路互连的碳纳米管通孔","authors":"M. Nihei, M. Horibe, A. Kawabata, Y. Awano","doi":"10.1109/IITC.2004.1345767","DOIUrl":null,"url":null,"abstract":"We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes. The total resistance of the CNT via was measured as three orders of magnitude lower than the current flows in parallel through about 1000 tubes. There is no degradation observed for 100 hours at the via current density of 2/spl times/10/sup 6/ A/cm/sup 2/, which is favourably with Cu vias. This is the first trial demonstration of CNT vias for future LSI interconnects.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"61","resultStr":"{\"title\":\"Carbon nanotube vias for future LSI interconnects\",\"authors\":\"M. Nihei, M. Horibe, A. Kawabata, Y. Awano\",\"doi\":\"10.1109/IITC.2004.1345767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes. The total resistance of the CNT via was measured as three orders of magnitude lower than the current flows in parallel through about 1000 tubes. There is no degradation observed for 100 hours at the via current density of 2/spl times/10/sup 6/ A/cm/sup 2/, which is favourably with Cu vias. This is the first trial demonstration of CNT vias for future LSI interconnects.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"176 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"61\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 61

摘要

我们已经开发出由大约1000根碳纳米管组成的碳纳米管(CNT)通孔。碳纳米管通孔的总电阻被测量为比平行流过约1000个管的电流低三个数量级。当通孔电流密度为2/spl倍/10/sup 6/ A/cm/sup 2/时，在100小时内没有观察到降解现象，这对Cu通孔是有利的。这是用于未来大规模集成电路互连的碳纳米管通孔的首次试验演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Carbon nanotube vias for future LSI interconnects

We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes. The total resistance of the CNT via was measured as three orders of magnitude lower than the current flows in parallel through about 1000 tubes. There is no degradation observed for 100 hours at the via current density of 2/spl times/10/sup 6/ A/cm/sup 2/, which is favourably with Cu vias. This is the first trial demonstration of CNT vias for future LSI interconnects.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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