退火温度对GaAsN/GaAs异质结构发射和俘获过程的影响

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Pub Date : 2022-10-23 DOI:10.1109/ASDAM55965.2022.9966749

P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková

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引用次数: 0

摘要

采用深能级瞬态傅立叶光谱(DLTFS)研究了退火温度对氮含量分别为0.93、1.51和1.81%的GaAsN/GaAs二极管发射和捕获过程的影响。在350 K退火前后的DLTFS谱中，分别观察并确认了活化能分别为0.48 eV和0.63 eV的缺陷。退火温度对缺陷分布的影响最显著的是在温度小于300 K时氮含量最低(0.93%)的组织中。

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Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures

The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.

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2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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