亚伏和半毫米尺度的硅mos电容器MZI调制器

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141906

Weiwei Zhang, Arian Hashemi Talkhooncheh, M. Ebert, Ke Li, Minwo Wang, Bigeng Chen, G. Reed, A. Emami, D. Thomson

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引用次数: 0

摘要

我们报告了亚毫米级硅横向mos电容器MZI调制器的演示，其工作速度> 100 Gb/s PAM-4。3D封装发射器的射频摆幅为1.2Vpp, MZI的TDECQ为1.7 dB，总有效长度为600µm。

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Towards subvolt and half-mm scale silicon MOS-capacitor MZI modulators

We report the demonstration of sub-mm scale silicon lateral MOS-capacitor MZI modulators operating at > 100 Gb/s PAM-4. The 3D packaged transmitter demonstrates an RF swing of 1.2Vpp and a TDECQ of 1.7 dB for MZI with a total active length of 600 µm.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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