合成反铁磁自由层磁隧道结的开关特性

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-10-17 DOI:10.1109/INTMAG.2005.1464451

Y. Lee, Y. K. Kim, Taewan Kim, W. Park, I. Hwang, W. Jeong, Jang-eun Lee

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引用次数: 0

摘要

采用剩余态测量方法研究了不同合成反铁磁自由层的亚微米尺度MTJs的性能。磁隧道结器件是由TiN/PtMn/CoFe/Ru/CoFe/AlO/NiFe/Ru/NiFe/Ta组成的结构。结果表明，单自由层的结表现出复杂的开关行为，开关场变化较大;而特定自由层的结表现出无扭结的R-H曲线，开关场变化较小。测量了MTJ的磁流变比和磁化矩

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Switching characteristics in magnetic tunnel junctions with a synthetic antiferromagentic free layer

The properties of sub-micrometer scaled MTJs using various synthetic antiferromagnetic (SAF) free layer were studied using remanent-state measurement. The magnetic tunnel junction device was a structure consisted of TiN/PtMn/CoFe/Ru/CoFe/AlO/NiFe/Ru/NiFe/Ta. It was found that junctions using single free layer showed complex switching behaviors with larger switching field variation while the junction using a specific SAF free layer exhibited kink-free R-H curves with less switching field variation. MR ratio and magnetization moment of the MTJ were also measured

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来源期刊

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

CiteScore

0.50

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0.00%

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