Comparative analysis of the impacts of CNTFET and GNRFET drivers on the crosstalk effects in MLGNR interconnects at 7nm technology node

This paper presents a comparative evaluation of the performance of the multilayer graphene nanoribbon (MLGNR) lines with carbon-based drivers and receivers at 7nm technology node in presence of the crosstalk effects. Graphene nanoribbon field-effect transistors (GNRFET) and Carbon nanotube field-effect transistors (CNTFET) are used as driver and receiver inverters at the input and output of the MLGNR interconnects. For a more accurate assessment, the five-line transmission lines including two pairs of aggressor lines is considered. The results show that for the same Ioff and the same channel dimensions, CNTFET drivers show significant improvement regarding the crosstalk-induced effects over GNRFET. According to the results, using CNTFET drivers leads to 67%, 64%, and 34% lower crosstalk delay than the GNRFET-based for 100μm, 200μm and 500μm MLGNR interconnect length, respectively. Moreover, the CNTFET- based lines have 36%, 27%, and 16% smaller crosstalk noise area than their GNRFET counterparts for different lengths of MLGNR interconnects.