V. Afanas'ev, D. Brinkevich, A. Korzhenevski, V. Prosolovich, Yu.N. Yankovski
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SHF-transistors parameters optimization by germanium doping of silicon monocrystal
Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.
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