新的倒装芯片连接技术,采用在衬底上形成的电镀铜凸点进行细间距互连

F. Ueno, T. Motomura, H. Hirai, O. Shimada, Y. Sonoda, Y. Fukuoka
{"title":"新的倒装芯片连接技术,采用在衬底上形成的电镀铜凸点进行细间距互连","authors":"F. Ueno, T. Motomura, H. Hirai, O. Shimada, Y. Sonoda, Y. Fukuoka","doi":"10.1109/IEMTIM.1998.704701","DOIUrl":null,"url":null,"abstract":"We have developed a new FCA (flip chip attach) technology based on a new concept. Bump formation is very important in FCA technology. In conventional FCA technology, bumps are formed on bare chips, and an additional process to LSI manufacturing processes is required for bump formation on the wafer to complete the semiconductor device functional circuits. However, bumps in the new technology are formed on the PWB. Consequently, it is possible to use bare chips supplied by any semiconductor device maker. We have developed two kinds of bump formation technologies based on a newly developed concept. The first is a method using silver paste bumps produced by thick film printing technology (presented at 1996 IMC), and the second is a method using electroplated copper bumps for fine pitch interconnections. In this process, copper bumps are formed on PWB electrode pads by electroplating. Then, underfill resin is dispensed to the bare chip assembly area of the PWB. After bare chip I/O pads are positioned on the bumps, the bare chip is pressed and heated. The underfill resin is then rapidly hardened to retain the bump interconnections between the PWB pads and the bare chip I/O pads. This FCA technology can supply a very simple process and structure. We examined the reliability of this FCA technology by temperature cycling and temperature humidity tests. This FCA technology is very useful for realization of a high density module with fine pitch I/O devices with I/O pitch under 200 /spl mu/m.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"New flip chip attach technology for fine pitch interconnections using electroplated copper bumps formed on a substrate\",\"authors\":\"F. Ueno, T. Motomura, H. Hirai, O. Shimada, Y. Sonoda, Y. Fukuoka\",\"doi\":\"10.1109/IEMTIM.1998.704701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a new FCA (flip chip attach) technology based on a new concept. Bump formation is very important in FCA technology. In conventional FCA technology, bumps are formed on bare chips, and an additional process to LSI manufacturing processes is required for bump formation on the wafer to complete the semiconductor device functional circuits. However, bumps in the new technology are formed on the PWB. Consequently, it is possible to use bare chips supplied by any semiconductor device maker. We have developed two kinds of bump formation technologies based on a newly developed concept. The first is a method using silver paste bumps produced by thick film printing technology (presented at 1996 IMC), and the second is a method using electroplated copper bumps for fine pitch interconnections. In this process, copper bumps are formed on PWB electrode pads by electroplating. Then, underfill resin is dispensed to the bare chip assembly area of the PWB. After bare chip I/O pads are positioned on the bumps, the bare chip is pressed and heated. The underfill resin is then rapidly hardened to retain the bump interconnections between the PWB pads and the bare chip I/O pads. This FCA technology can supply a very simple process and structure. We examined the reliability of this FCA technology by temperature cycling and temperature humidity tests. This FCA technology is very useful for realization of a high density module with fine pitch I/O devices with I/O pitch under 200 /spl mu/m.\",\"PeriodicalId\":260028,\"journal\":{\"name\":\"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMTIM.1998.704701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMTIM.1998.704701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

我们基于一个新概念开发了一种新的FCA(倒装芯片连接)技术。碰撞形成在FCA技术中非常重要。在传统的FCA技术中,凸起是在裸片上形成的,为了完成半导体器件的功能电路,在晶圆上形成凸起需要LSI制造工艺的附加工艺。然而,新技术在PWB上形成了颠簸。因此,可以使用任何半导体设备制造商提供的裸芯片。基于一个新发展的概念,我们开发了两种凹凸形成技术。第一种是使用厚膜印刷技术产生的银膏凸起(1996年IMC上提出)的方法,第二种是使用电镀铜凸起进行细间距互连的方法。在该工艺中,通过电镀在PWB电极垫上形成铜凸起。然后,在pcb的裸芯片组装区涂覆下填料树脂。将裸芯片I/O垫放置在凸起上后,对裸芯片进行按压和加热。然后,衬底树脂迅速硬化,以保持PWB衬垫和裸芯片I/O衬垫之间的凹凸互连。这种FCA技术可以提供非常简单的工艺和结构。我们通过温度循环和温度湿度测试来检验这种FCA技术的可靠性。这种FCA技术对于实现I/O螺距低于200 /spl mu/m的小螺距I/O器件的高密度模块非常有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New flip chip attach technology for fine pitch interconnections using electroplated copper bumps formed on a substrate
We have developed a new FCA (flip chip attach) technology based on a new concept. Bump formation is very important in FCA technology. In conventional FCA technology, bumps are formed on bare chips, and an additional process to LSI manufacturing processes is required for bump formation on the wafer to complete the semiconductor device functional circuits. However, bumps in the new technology are formed on the PWB. Consequently, it is possible to use bare chips supplied by any semiconductor device maker. We have developed two kinds of bump formation technologies based on a newly developed concept. The first is a method using silver paste bumps produced by thick film printing technology (presented at 1996 IMC), and the second is a method using electroplated copper bumps for fine pitch interconnections. In this process, copper bumps are formed on PWB electrode pads by electroplating. Then, underfill resin is dispensed to the bare chip assembly area of the PWB. After bare chip I/O pads are positioned on the bumps, the bare chip is pressed and heated. The underfill resin is then rapidly hardened to retain the bump interconnections between the PWB pads and the bare chip I/O pads. This FCA technology can supply a very simple process and structure. We examined the reliability of this FCA technology by temperature cycling and temperature humidity tests. This FCA technology is very useful for realization of a high density module with fine pitch I/O devices with I/O pitch under 200 /spl mu/m.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信