基于SOI-pin-diode测试结构的二极管测热计直流温度模型

2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI:10.1109/SM2ACD.2010.5672328

P. Kropelnicki, H. Vogt

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引用次数: 2

摘要

人们提出了不同的模型来模拟二极管的iv特性。在本文中，我们提出了一个简单的模型，该模型既描述了soi引脚二极管的IV-和温度特性，也可以用于不同类型的二极管。众所周知，二极管的直流特性可以用简单的肖克利方程近似表示。然而，当需要对器件参数进行更精确的建模时，例如基于二极管的微辐射热计，则必须考虑简单指数行为的偏差。这些附加效应通常取决于二极管的工作点，并且可以通过允许理想因数随所施加的工作电压变化而包括在内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new DC-temperature model for a diode bolometer based on SOI-pin-diode test structures

Different models have been proposed for modeling the IV-characteristics of diodes. In this paper we present a simple model, which describes both the IV- and the temperature characteristics of a SOI-pin-diode and can be used for different diodes types. It is well known that the DC-characteristics of a diode can be approximated by the simple Shockley-equation. However, when a more exact modelling of device parameters is needed, for example for a microbolometer based on a diode, deviations from the simple exponential behaviour have to be taken into account. These additional effects usually depend on the operating point of the diode and can be included by allowing the ideality factor to vary with the applied operating voltage.

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来源期刊

2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)

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