组合线性-对数CMOS图像传感器与FPN校准

Shuang Cui, Yusong Mu, Ning Ding, Jiaqi Jiang, Yuchun Chang
{"title":"组合线性-对数CMOS图像传感器与FPN校准","authors":"Shuang Cui, Yusong Mu, Ning Ding, Jiaqi Jiang, Yuchun Chang","doi":"10.1109/CICTA.2018.8706097","DOIUrl":null,"url":null,"abstract":"This paper presents a charge compensated phototransistor for a high dynamic range linear-logarithmic CMOS image sensor. The pixel is based on the four-transistor active pixel structure which can automatically switch between the linear mode and logarithmic mode according to the incident light intensity. This paper also proposes a fixed pattern noise (FPN) correction technique for the proposed pixel sensor. The FPN caused by the threshold voltage variation of the transfer gate is corrected by the calibration method of two-step charge transfer. The prototype sensor consisting of a $160 \\times 200$ pixel array with the pixel pitch of $8 \\times 8 \\mu m^{2}$ is fabricated with a 0.18 $\\mu m$ 1P6M standard CMOS process. It is found that the dynamic range is achieved 169 dB and the FPN is reduced by 80%.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"14 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Combined Linear-Logarithmic CMOS Image Sensor with FPN Calibration\",\"authors\":\"Shuang Cui, Yusong Mu, Ning Ding, Jiaqi Jiang, Yuchun Chang\",\"doi\":\"10.1109/CICTA.2018.8706097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a charge compensated phototransistor for a high dynamic range linear-logarithmic CMOS image sensor. The pixel is based on the four-transistor active pixel structure which can automatically switch between the linear mode and logarithmic mode according to the incident light intensity. This paper also proposes a fixed pattern noise (FPN) correction technique for the proposed pixel sensor. The FPN caused by the threshold voltage variation of the transfer gate is corrected by the calibration method of two-step charge transfer. The prototype sensor consisting of a $160 \\\\times 200$ pixel array with the pixel pitch of $8 \\\\times 8 \\\\mu m^{2}$ is fabricated with a 0.18 $\\\\mu m$ 1P6M standard CMOS process. It is found that the dynamic range is achieved 169 dB and the FPN is reduced by 80%.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"14 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706097\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种用于高动态范围线性对数CMOS图像传感器的电荷补偿光电晶体管。所述像素基于四晶体管有源像素结构,可根据入射光强在线性模式和对数模式之间自动切换。本文还提出了一种固定模式噪声(FPN)校正技术。采用两步电荷转移校准方法,对转移门阈值电压变化引起的FPN进行了校正。原型传感器由$160 \ × 200$像素阵列组成,像素间距为$8 \ × 8 \ μ m^{2}$,采用0.18 $\ μ m$ 1P6M标准CMOS工艺制造。动态范围达到169 dB, FPN降低80%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Combined Linear-Logarithmic CMOS Image Sensor with FPN Calibration
This paper presents a charge compensated phototransistor for a high dynamic range linear-logarithmic CMOS image sensor. The pixel is based on the four-transistor active pixel structure which can automatically switch between the linear mode and logarithmic mode according to the incident light intensity. This paper also proposes a fixed pattern noise (FPN) correction technique for the proposed pixel sensor. The FPN caused by the threshold voltage variation of the transfer gate is corrected by the calibration method of two-step charge transfer. The prototype sensor consisting of a $160 \times 200$ pixel array with the pixel pitch of $8 \times 8 \mu m^{2}$ is fabricated with a 0.18 $\mu m$ 1P6M standard CMOS process. It is found that the dynamic range is achieved 169 dB and the FPN is reduced by 80%.
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