具有1 /spl μ m和2 /spl μ m大光腔结构的大功率AlGaAs/ gaasp -广域激光二极管

Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) Pub Date : 2000-09-10 DOI:10.1109/CLEOE.2000.910289

R. Hulsewede, J. Sebastian, H. Wenzel

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摘要

只提供摘要形式。发射波长约为800 nm的大功率广域激光二极管是固体激光器抽运和医疗应用中激光技术的关键元件。对于大多数应用，减小垂直光束发散是有用的。在本文中，这是通过扩大AlGaAs-GaAsP广域激光二极管的大光腔(LOC)结构来增加激光面处的垂直光斑尺寸来实现的。讨论了激光应用中必须考虑的垂直方向和横向方向的光束质量以及高功率和老化特性。

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High power AlGaAs/GaAsP-broad area laser diodes with 1 /spl mu/m- and 2 /spl mu/m large optical cavity structures

Summary form only given. High power broad area (BA) laser diodes emitting at a wavelength of about 800 nm are key elements for laser technologies in pumping of solid state lasers and medical applications. For most applications, it is useful to diminish the vertical beam divergence. In this paper, this is realised by increasing the vertical spot size at the laser facet by widening the large optical cavity (LOC) structure for AlGaAs-GaAsP broad area laser diodes. The beam quality in vertical and lateral direction as well as the high power and aging behaviour are discussed, which are essential for laser applications.

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Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)

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