1060nm横共振单模金属孔径VCSEL阵列，功耗低于50 fJ/bit

2021 European Conference on Optical Communication (ECOC) Pub Date : 2021-09-13 DOI:10.1109/ecoc52684.2021.9606028

H. Ibrahim, Ahmed M. A. Hassan, X. Gu, S. Shinada, M. Ahmed, F. Koyama

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引用次数: 4

摘要

我们提出了1060nm腔内金属孔径VCSELs阵列，以实现高速和单模工作，并具有创纪录的低功耗。腔内金属孔径引起横向共振，提供调制带宽增强。我们演示了60Gbps PAM4和40Gbps NRZ调制，能量效率分别为48ft/bit和50fj/bit。

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1060nm Single-mode Metal-aperture VCSEL Array with Transverse Resonance and Low Power Consumption below 50 fJ/bit

We present 1060nm intracavity metal-aperture VCSELs array toward high-speed and single-mode operation with record low power consumption. The intracavity metal-aperture causes the transverse resonance which provides the modulation bandwidth-enhancement. We demonstrated 60Gbps PAM4 and 40Gbps NRZ modulations with energy efficiency of 48ft/bit and 50fj/bit, respectively.

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2021 European Conference on Optical Communication (ECOC)

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