45纳米CMOS中60GHz以上交叉耦合基态压控振荡器

A. Katz, O. Degani, Y. Shacham-Diamand, E. Socher
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引用次数: 6

摘要

提出了一种60ghz以上交叉耦合NMOS差分LC CMOS压控振荡器,采用45nm标准CMOS技术实现。在1.2 V的电源电压下,电路输出38mA (72mA,包括输出缓冲器)的电流,需要0.037 mm2的电路面积,包括不带衬垫的差分输出缓冲器。该电路的输出功率为- 9dBm至- 11dBm,在10MHz偏移时产生- 100.02dBc/Hz的相位噪声。VCO提供0.2GHz的频率调谐范围,而统计过程变化表现为不同测量样本(从68GHz到72.5GHz)的4.5GHz VCO中心频率漂移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A beyond 60GHz cross-coupled fundamental VCO in 45nm CMOS
A beyond 60 GHz cross-coupled NMOS differential LC CMOS VCO is presented in this paper, which is implemented in 45nm standard CMOS technology. Working with a supply voltage of 1.2 V the circuit draws a current of 38mA (72mA including output buffer) and requires a circuit area of 0.037 mm2 including the differential output buffer without pads. The circuit delivers an output power of −9dBm to −11dBm and yields a measured phase noise of −100.02dBc/Hz at 10MHz offset. The VCO offers a frequency tuning range of 0.2GHz, while statistical process variation is manifested in a 4.5GHz VCO central frequency drift for different measured samples (from 68GHz to 72.5GHz).
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